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Band Switching Diodes
MA2C859 (MA859)
Silicon epitaxial planar type
Unit : mm
For band switching
0.45 max.
* Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole * Less voltage dependence of the terminal capacitance Ct * Low forward dynamic resistance rf * Optimum for a band switching of a tuner
0.2 max.
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 -25 to +85 -55 to +100 Unit V mA C C
2
1.75 max.
1 : Cathode 2 : Anode JEDEC : DO-34
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC)*1 Symbol IR VF Ct r f* 2 rf
*3
Conditions VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz
Min
Typ
Max 100 1.0
13 min.
2.2 0.3
1st Band 2nd Band
0.2 max.
13 min.
I Features
COLORED BAND INDICATES CATHODE
1
Unit nA V pF
Forward voltage (DC) Terminal capacitance Forward dynamic resistance
0.8 0.5 0.77
1.2 0.65 0.98
Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Measurement in light shielded condition *2 : rf measuring instrument: Nihon Koshuha MODEL TDC-121A Lead length 5mm *3 : rf measuring instrument: YHP 4191A Lead length 5mm
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2C859 Black Blue
Note) The part number in the parenthesis shows conventional part number.
253
MA2C859
IF V F
102 103 Ta = 85C 10
Band Switching Diodes
IR V R
103
IR T a
Forward current IF (mA)
Reverse current IR (pA)
50C
1
Reverse current IR (pA)
102
102
VR = 33 V
20 V
10 25C
10
10-1 Ta = 85C 10-2 50C 25C - 20C
1
1
10-3
0
0.2
0.4
0.6
0.8
1.0
1.2
10-1
0
10
20
30
40
50
10-1 -40
0
40
80
120
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
rf f
10 16 IF = 2 mA Ta = 25C rf Tester: TDC-121A 8 14 12 10 8 6 4 2 0
rf f
3.2
r f If
Forward dynamic resistance rf ()
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1 f = 100 MHz Ta = 25C rf Tester: TDC-121A
Forward dynamic resistance rf ()
6
4
2
0
Forward dynamic resistance rf ()
IF = 2 mA Ta = 25C rf Tester: YHP4191A
1
3
10
30
100
1
2
3
5
10
20 30 50
100
1
10
100
Frequency f (MHz)
Frequency f (MHz)
Forward current IF (mA)
rf IF
3.2 2.0 f = 1 000 MHz Ta = 25C rf Tester: YHP4191A
Ct VR
1 000 f = 1 MHz Ta = 25C
If(surge) tW
Forward dynamic resistance rf ()
1.6
Forward surge current IF(surge) (A)
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1
Terminal capacitance Ct (pF)
100
1.2
10
0.8
1
0.4
0 0.3 1 3 10 30 100
0
10
20
30
40
50
0.1 0.03
0.1
0.3
1
3
10
30
Forward current IF (mA)
Reverse voltage VR (V)
Pulse width tW (ms)
254
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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